Available Plano Substrates


OPTOMAN has a number of 1/2″, 1″, 2″ and 3” plano substrates in stock, ready to be coated. Choosing the in-stock substrate option allows, on average, saving 6 weeks of lead time and reducing end-product cost 3 times.

Choose the suitable plano substrates and OPTOMAN will make custom coatings on them. OPTOMAN is a coatings superhero, so uncoated substrates are not for sale.

 

General Specifications

½” substrate (a)

MaterialUVFS
Diameter12.7 mm (+0/0.1 mm)
Thickness3.0 mm (+0/0.1 mm)
Clear aperture>90%
Surface quality, S1/S210-5 S-D as per MIL-PRF-13830B
Surface flatness, S1/S2<λ/10@633 nm
Transmitted Wave-front distortion<λ/10 @ 633 nm over CA
Parallelism<10 arcsec
Protective chamfers0.1 - 0.2 mm x 45
Chips<0.1 mm (<0.05 mm best effort

½” substrate (b)

MaterialUVFS
Diameter12.7 mm (+0/0.1 mm)
Thickness6.35 mm (+0/0.1 mm
Clear aperture>90%
Surface quality, S1/S210-5 S-D as per MIL-PRF-13830B
Surface flatness, S1/S2<λ/10@633 nm
Parallelism<10 arcsec
Protective chamfers0.1 - 0.4 mm x 45°
Chips<0.2 mm

1” substrate (a)

MaterialUVFS
Diameter25.4 mm (+/-0.1 mm)
Thickness3.0 mm (+/-0.1 mm)
Clear aperture>90%
Surface quality, S1/S2 2020-10 S-D as per MIL-PRF-13830B
Surface flatness, S1/S2<λ/8 @ 633 nm
Parallelism<3 arcmin
Protective chamfers 0.20.2 - 0.4 mm x 45°
Chips<0.2 mm stoned

1” substrate (b)

MaterialUVFS
Diameter25.4 mm (+/-0.1 mm)
Thickness5.0 mm (+/-0.1 mm)
Clear aperture>90%
Surface quality, S1/S210-5 S-D as per MIL-PRF-13830B
Surface flatness, S1/S2<λ/10 @ 633 nm
Parallelism<10 arcsec
Protective chamfers0.2 - 0.4 mm x 45°
Chips<0.2 mm

1” substrate (c)

MaterialUVFS
Diameter25.4 mm (+/-0.1 mm)
Thickness6.35 mm (+/-0.1 mm)
Clear aperture>90%
Surface quality, S1/S210-5 S-D as per MIL-PRF-13830B
Surface flatness, S1/S2<λ/10 @ 633 nm
Parallelism<10 arcsec
Protective chamfers0.2 - 0.4 mm x 45°
Chips<0.2 mm stoned

2” substrate (a)

MaterialUVFS
Diameter50.8 mm (+/-0.1 mm)
Thickness8.0 mm (+/-0.1 mm)
Clear aperturemin 46 mm
Surface quality, S1/S220-10 S-D as per MIL-PRF-13830B
Surface flatness, S1/S2<λ/10 @ 633 nm per CA
Transmitted Wave-front distortion<λ/10 @ 633 nm over CA
Surface irregularity S1/S2<λ/10 @ 633 nm per CA
Parallelism<30 arcsec
Protective chamfers0.4 - 0.6 mm x 45°
Chips<0.1 mm stoned

2” substrate (b)

MaterialUVFS
Diameter50.8 mm (+/-0.1 mm)
Thickness9.52 mm (+/-0.1 mm)
Clear aperturemin 45 mm
Surface quality, S120-10 S-D as per MIL-PRF-13830B per CA
Roughness (RMS), S1<5 ångström
Surface quality, S2commercial polish (80-50 S-D)
Surface flatness, S1<λ/10 @ 633 nm per CA
Surface irregularity S1<λ/10 @ 633 nm over CA
Parallelism<5 arcmin
Protective chamfers0.2 – 0.3 mm x 45°
Chips<0.3 mm stoned

3” substrate

MaterialUVFS
Diameter50.8 mm (+/-0.1 mm)
Thickness12.7 mm (+/-0.1 mm)
Clear aperturemin 61 mm
Surface quality, S1/S220-10 S-D per MIL-PRF-13830B
Surface flatness, S1/S2<λ/10 @ 633 nm per CA
Surface irregularity S1/S2<λ/10 @ 633 nm over CA
Transmitted Wave-front distortion<λ/8 @ 633 nm over CA
Parallelism<1 arcmin
Protective chamfers0.4 - 0.6 mm x 45°
Chips<0.5 mm stoned

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